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Proceedings Paper

Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate
Author(s): Joerg Soellner; Michael Heuken; Klaus Heime
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Paper Abstract

In this work we will report the growth of ZnSe and ZnS grown by atmospheric pressure MOVPE with a rotating substrate which allows a very good thickness homogeneity of the layers. As reactants diethylzinc dimethyizinc diethylselenide and H2S and as carrier gas H2 was used. High mobilities and low background doping concentrations (i3ooK 370 cm2/Vs n3(JK 7x 1014 cm3) sharp excitonic PL features and very thin (2nm) ZnS/ZnSe multilayer structures demonstrate the facilities of this growth technique.

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24323
Show Author Affiliations
Joerg Soellner, RWTH Aachen (Germany)
Michael Heuken, RWTH Aachen (Germany)
Klaus Heime, RWTH Aachen (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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