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Proceedings Paper

Atomic scale simulation of the growth of CdTe layers on GaAs
Author(s): Mehdi Djafari Rouhani; M. Laroussi; A. M. Gue; Daniel Esteve
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Paper Abstract

The initial stages of the growth of CdTe on (100) GaAs with 14. 7 lattice mismatch has been simulated. It is shown that growth in (111) direction with the presence of twins is always preferred on perfect substrate surfaces. In the case of growth in (100) direction misfit dislocations are formed. The critical thickness is evaluated by extrapolation to be 6 - 8 atomic monolayers .

Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24322
Show Author Affiliations
Mehdi Djafari Rouhani, Univ. Paul Sabatier (France)
M. Laroussi, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
A. M. Gue, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
Daniel Esteve, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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