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Proceedings Paper

Atomic scale simulation of the growth of CdTe layers on GaAs
Author(s): Mehdi Djafari Rouhani; M. Laroussi; A. M. Gue; Daniel Esteve
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Paper Details

Date Published: 1 March 1991
PDF: 9 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24322
Show Author Affiliations
Mehdi Djafari Rouhani, Univ. Paul Sabatier (France)
M. Laroussi, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
A. M. Gue, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)
Daniel Esteve, Lab. d'Automatique et d'Analyse des Systemes/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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