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Proceedings Paper

Electrical and optical properties of As- and Li-doped ZnSe films
Author(s): Kurt Hingerl; Jarmo Lilja; Mika Toivonen; Markus Pessa; Wolfgang Jantsch; Donat Josef As; W. Rothemund; P. Juza; Helmut Sitter
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Paper Abstract

Luminescense and photoconductivity measurements were performed on MBE grown ZnSe layers with various arsenic concentrations. Two shallow acceptor levels with energies of 125 meV and 260 meV were found. Increasing the As content in order to increase the number of shallow acceptor states resulted in highly compensated samples. For Li the acceptor binding energy was found to be 113 meV. Also in the case of Li a higher doping concentration did not augment the shallow levels. Electrical characterization of the Li doped samples was done by C-V and I-V measurements. The films were found to be p-type.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24321
Show Author Affiliations
Kurt Hingerl, Univ. Linz (Austria)
Jarmo Lilja, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
Wolfgang Jantsch, Univ. Linz (Austria)
Donat Josef As, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
W. Rothemund, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
P. Juza, Univ. Linz (Austria)
Helmut Sitter, Univ. Linz (Austria)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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