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Proceedings Paper

In-situ investigation of the low-pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements
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Paper Details

Date Published: 1 March 1991
PDF: 13 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24320
Show Author Affiliations
Bernard Drevillon, Ecole Polytechnique (France)
Manijeh Razeghi, Thomson-CSF (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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