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Proceedings Paper

Hot electron instabilities and light emission in GaAs quantum wells
Author(s): Naci Balkan; Brian K. Ridley
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Paper Abstract

In n-type GaAs/Gai. xAlxAs single double and multiple quantum wells continuous oscillations in the current occur when electric fields in excess of a few hundred volts cm1 are applied along the layers. The frequency of the oscillations increases with the electric field and the electron concentration over a range of frequencies up to the gegahertz region. A strong electroluminescence (EL) signal is observed at and above the threshold field of the instabilities. The intensity of the EL signal increases with electric field as ''EL Fs where s is typically s 5. The EL spectra peaks at an energy close to the PL spectra. EL is shown to be associated with hot electron recombination and it is speculated that it originates in p-channels in the well adjacent to the AlGaAs cladding. The study provides a technique which can be used as a tool to determine the quality of GaAs quantum wells.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24317
Show Author Affiliations
Naci Balkan, Univ. of Essex (United Kingdom)
Brian K. Ridley, Univ. of Essex (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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