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Proceedings Paper

Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers
Author(s): M. Tischel; M. Rosenzweig; Axel Hoffmann; Herbert Venghaus; F. Fidorra
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Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24316
Show Author Affiliations
M. Tischel, Technische Univ. Berlin (Germany)
M. Rosenzweig, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
Axel Hoffmann, Technische Univ. Berlin (Germany)
Herbert Venghaus, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
F. Fidorra, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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