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Proceedings Paper

Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers
Author(s): M. Tischel; M. Rosenzweig; Axel Hoffmann; Herbert Venghaus; F. Fidorra
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Paper Abstract

Buried Ridge Structure GaInAsP/InP lasers with stripes parallel to and directions are fabricated by metal-orgnic vapour phase epitaxy regrowth and effective carrier lifetimes Teff of these devices are determined from the variation of the turn-on delay of the emitted radiation when short current pulses are applied to the lasers for different bias currents. We obtained Teff 2 ns for stripes parallel to the direction and eff lfl the range from 0. 5 ns to 0. 7 ns for stripes parallel to the direction. Our results demonstrate that the earlier observed large threshold currents of lasers with stripes parallel to the direction are essentially due to reduced carrier lifetimes and to a minor extent due to additional leakage currents. The reduced effective carrier lifetimes are attributed to Zn which has diffused from the GaInAs-contact layer into the active layer in accordance with recent secondary ion mass spectroscopic investigations. The reduced carrier lifetime leads to an increase of the 3 dB cut-off frequency of directly modulated lasers beyond 6 GHz. SPIE Vol 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications 1(1990) / 917

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24316
Show Author Affiliations
M. Tischel, Technische Univ. Berlin (Germany)
M. Rosenzweig, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
Axel Hoffmann, Technische Univ. Berlin (Germany)
Herbert Venghaus, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
F. Fidorra, Heinrich-Hertz-Institut fuer Nachrichtentechnik Berlin GmbH (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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