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Proceedings Paper

Cyclotron resonance and photoluminescence in GaAs in a microwave field
Author(s): B. M. Ashkinadze; Vassilij V. Bel'kov; A. G. Krasinskaya
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Paper Abstract

Microwave absorption in GaAs and influence of hot charge carriers on formation and dissociation prcxeses of xund states was studied. I'1k investigated classical cyclotron resonance in pure GaAs epitaxial layers. This made it ible with tt lp of contact I method to determins a norecjilibrium electron mobility . Smooth decreasir of exciton 1umirscence with inoreasir of microwave power was observed and a model describir this ptnomenon was suggested.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24306
Show Author Affiliations
B. M. Ashkinadze, A. F. Ioffe Physical-Technical Institute (Russia)
Vassilij V. Bel'kov, A. F. Ioffe Physical-Technical Institute (Russia)
A. G. Krasinskaya, A. F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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