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Proceedings Paper

Energy levels of GaAs/A1xGa1-xAs double-barrier quantum wells
Author(s): Yong Chen; Gerard Neu; C. Deparis; J. Massies
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Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24303
Show Author Affiliations
Yong Chen, Scuola Normale Superiore (France)
Gerard Neu, Lab. de Physique du Solide et Energie Solaire/CNRS (France)
C. Deparis, Lab. de Physique du Solide et Energie Solaire/CNRS (France)
J. Massies, Lab. de Physique du Solide et Energie Solaire/CNRS (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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