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Proceedings Paper

Exciton-polariton photoluminescence in ultrapure GaAs
Author(s): Yuri V. Zhilyaev; Victor V. Rossin; Tatiana V. Rossin; V. V. Travnikov
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Paper Abstract

The low temperature photoluminescence of ultra pure GaAs grown by vapour phase epitaxy was investigated .The free exciton luminescence spectnim of GaAs is described in the framework of the polari ton theory . An inf luence of the excitation density and temperature on the polariton luminescence 1 ineshape was studied . Temperature transi tion from the case of the strong exci ton-photon coupi ing to the case of the weak ex citon-photon coupl ing was observed . An opportunity of use of the polariton luinines cence 1 me shape analysis for characterizat ion of pure GaAs crysta 1 s is demoristra ted.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24302
Show Author Affiliations
Yuri V. Zhilyaev, A. F. Ioffe Physical-Technical Institute (Russia)
Victor V. Rossin, A. F. Ioffe Physical-Technical Institute (Russia)
Tatiana V. Rossin, A. F. Ioffe Physical-Technical Institute (Russia)
V. V. Travnikov, A. F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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