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Proceedings Paper

Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials
Author(s): Hans-Joachim Schulz; Karl H. Schoenbach; B. M. Kimpel; Ralf Peter Brinkmann
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Paper Abstract

A model of one-electron states is developed for the energy levels of substitutional chromium ions in GaAs. This strong-crystal field approach allows for t2- and e-type states of the ions Cr4(d2) Cr3(d3) Cr2(d4) and Cr(d5) in a Td environment. A great deal of the reported experimental evidence can be reconciled in a uniform picture by taking into account donor- and acceptor-like processes and internal transitions of these oxidation states. These deliberations are supported by cryo-temperature cathodoluminescence measurements in the near-infrared range.

Paper Details

Date Published: 1 March 1991
PDF: 14 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24299
Show Author Affiliations
Hans-Joachim Schulz, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Karl H. Schoenbach, Old Dominion Univ. (Germany)
B. M. Kimpel, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Ralf Peter Brinkmann, Old Dominion Univ. (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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