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Proceedings Paper

Energy-level structure and electron transitions of GaAs:Cr optoelectronic materials
Author(s): Hans-Joachim Schulz; Karl H. Schoenbach; B. M. Kimpel; Ralf Peter Brinkmann
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Paper Details

Date Published: 1 March 1991
PDF: 14 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24299
Show Author Affiliations
Hans-Joachim Schulz, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Karl H. Schoenbach, Old Dominion Univ. (Germany)
B. M. Kimpel, Fritz-Haber-Institute der Max-Planck-Gesellschaft (Germany)
Ralf Peter Brinkmann, Old Dominion Univ. (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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