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Proceedings Paper

Growth and characterization of semiconducting Fe-Si2 thin layers on Si(111)
Author(s): Angela Rizzi; Heiko D. Moritz; Hans Luth
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Paper Abstract

Semiconducting FeSi2 thin layers have been grown on Si(111) by solid state reaction under UHY conditions. The different reaction steps in the temperature range 380 750C were followed in-situ by Auger Electron Spectroscopy (AES). FeSi2 is formed between 550 and 680 C. The low energy excitation spectra of the thin FeSi2 layers were measured by High Resolution Electron Energy Loss Spectroscopy (HREELS). Surface phonon excitations at 50 meV energy are observed and explained in the framework of dielectric theory of surface scattering. The presence of the Fuchs-Kliewer surface phonons in the HREELS spectra gives evidence of the semiconducting character of the FeSi2 overlayer. In the higher energy range a broad loss structure occurs corresponding to the excitation of electronic interband transitions. The onset of this structure at 0. 8 eV gives an indication of the band gap energy of the silicide. Its intensity together with the small experimental q11 transfer is an evidence of a direct band gap for the FeSi2 layer.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24298
Show Author Affiliations
Angela Rizzi, Forschungszentrum Juelich GmbH (Germany)
Heiko D. Moritz, Forschungszentrum Juelich GmbH (Germany)
Hans Luth, Forschungszentrum Juelich GmbH (Germany)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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