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Proceedings Paper

Optical resonances of a semiconductor superlattice in parallel magnetic and electric fields
Author(s): Monica Pacheco; Zdenka Barticevic; Francisco Claro
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Paper Abstract

We report calculations of the optical absorption coefficient for interband transitions in a superlattice subject to electric and magnetic fields parallel to the growth axis. We show that in a two-band model the absorption spectrum is a sequence of resonances with a structure that can be simple or very complex depending in a sensitive way on the ratio between the magnetic and the electric energies. We discuss the case of GaAs/A1GaAs superlattices using a six-band model in the envelope function formalism. For this system we show that the two-band parabolic model may only be used at low magnetic field.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24297
Show Author Affiliations
Monica Pacheco, Univ. de Santiago (Chile)
Zdenka Barticevic, Univ. Federico Santa Maria (Chile)
Francisco Claro, Univ. Catolica (Chile)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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