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Proceedings Paper

Density of localized states in glow-discharge a-Si1-x Cx:H
Author(s): Ozcan Oktu; Sandro Usala; Guy J. Adriaenssens; H. Tolunay; A. Eray
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Paper Abstract

For a-Si1 C :H samples prepared with /([CH4J + [SiH4J) ratios of 0. 1 0. 2 dxO. 25 the density of deep states has been investigated by means of post-transit-time photocurrent analysis and thermally stimulated conductivity. Both techniques yield results which are in good agreement and show a localized states density which rises towards midgap.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24296
Show Author Affiliations
Ozcan Oktu, Katholieke Univ. Leuven (Belgium)
Sandro Usala, Katholieke Univ. Leuven (Belgium)
Guy J. Adriaenssens, Katholieke Univ. Leuven (Belgium)
H. Tolunay, Hacettepe Univ. (Turkey)
A. Eray, Hacettepe Univ. (Turkey)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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