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Proceedings Paper

Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD
Author(s): O'Dae Kwon; Seung-Won Lee; Woong-Lim Choi; Kwang-Il Kim; Yoon-Ha Jeong
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Paper Abstract

GaAS I AIGaAs multiple quantum well structures grown by low pressure metal organic chemical vapor deposition have been studied using electron microscopy photoluminescence photoabsorption and photocurrent spectroscopies. Room temperature exciton doublets quantum confined Stark shifts were observed and analysed.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24293
Show Author Affiliations
O'Dae Kwon, Pohang Institute of Science and Technology (South Korea)
Seung-Won Lee, Pohang Institute of Science and Technology (South Korea)
Woong-Lim Choi, Pohang Institute of Science and Technology (South Korea)
Kwang-Il Kim, Pohang Institute of Science and Technology (South Korea)
Yoon-Ha Jeong, Pohang Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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