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Proceedings Paper

Optoelectronic neuron
Author(s): Jacques I. Pankove; Christian V. Radehaus; Gustaaf Borghs
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Paper Abstract

A pnpn photothyristor structure made of ITT-V semiconductors may function as an optoelectronic neuron. The input and output can be electrical and/or optical. The device responds to light and can emit light. The device is endowed with thresholding and memory capabilities. A group of such devices can be integrated in an array to form a neural net capable of inter-neuron interactions that include global and local inhibition and enhancement of response. These integrated neurons may eventually lead :. o learning and other useful applications.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24290
Show Author Affiliations
Jacques I. Pankove, Univ. of Colorado (United States)
Christian V. Radehaus, Univ. of Colorado (United States)
Gustaaf Borghs, IMEC (Belgium)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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