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Proceedings Paper

High-efficiency UV and blue emitting devices prepared by MOVPE and low-energy electron-beam irradiation treatment
Author(s): Isamu Akasaki; Hideaki Amano
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Paper Abstract

The room teffiperature stiniulated emission near ultraviolet from ntype GaN film which was grown by MOVPE on a sapphire substrate is observed for the first time. The low energy electron beam irradiation treatment lowers the resistivity of Mgdoped GaN which tends to show p-type conduction and simultaneously enhances blue luminescence efficiency drastically. The pn junction LED shows strong both nearbandedge UV ends sion from nlayer and blue emission from player.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24289
Show Author Affiliations
Isamu Akasaki, Nagoya Univ. (Japan)
Hideaki Amano, Nagoya Univ. (Japan)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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