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Proceedings Paper

Ultra-high-frequency GaInAs/InP devices and circuits for millimeter wave application
Author(s): Paul T. Greiling
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Paper Abstract

InP-based (AlInAs/GaInAs) high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have demonstrated a substantial performance improvement over GaAs-based devices. HEMTS with extrinsic over 200 GHz fmax''s over 300 GHz and extremely low noise figures with high associated gain ( 5 dB with 15 dB at 12 GHz and 5 dB with 8 dB at 60 GHz) have been achieved. HBTs have exhibited fT''s exceeding 90 GHz with fmax''s of 70 GHz. Digital and analog ICs have shown state-of-the-art performance a 25 0Hz divide by 4 a 9 GHz 8/9 dual modulus divider and a dc coupled feedback amplifier with 33 GHz bandwidth. The status of these device technologies for high performance microwave and millimeter-wave applications will be discussed.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24288
Show Author Affiliations
Paul T. Greiling, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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