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Proceedings Paper

Photoreflectance for the in-situ monitoring of semiconductor growth and processing
Author(s): Fred H. Pollak
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Paper Abstract

Photoreflectance a contactless form of electromodulation is a very useful technique for the in-situ monitoring of important growth/processing parameters. This paper will discuss some recent applications including (a) determination of substrate temperature (GaAs InP) and alloy composition (GaAlAs InGaAs) during actual growth condition at elevated temperatures (b) evaluation of interfacial quality of a strained layer In0 2Ga0 8As/GaAs single quantum well and (c) studies of Fermi level pinning. The latter includes measurements in an MBE machine before (and after) exposure to air and the effects of metallization (Schottky barrier formation) in a UHV chamber.

Paper Details

Date Published: 1 March 1991
PDF: 22 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24287
Show Author Affiliations
Fred H. Pollak, Brooklyn College/CUNY (United States)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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