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Proceedings Paper

Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs
Author(s): Maurice Quillec
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Paper Abstract

Two quaternary Ill-V systems are available for InP based opto and micro-electronics : InGaAsP and InGaAlAs. The first has been extensively studied with remarkable success for opto-devices as well as OEIC''s. Although the second has proved ofinterest for high performance microelectronic devices it was not considered until recently as a challenger for optoelectronics. After a review of the different techniques used for producing structures in the two systems we show that the InGaAlAs system tends to drive new interest also in the opto-electronic field. It is well suited to MBE especially when compositional variations are required. Good material has been prepared and characterized leading to 1 . 5 micron emitting quantum well laser diodes and modulators that compare to those obtained from the InGaAsP systems I - SOMEDATA ON INGAASP VERSUS INGAALAS Two quaternary alloys can be epitaxially grown on InP provided that the following relations are fulfilled: InGa1AP1 : 1 - x (1 - 0. 53) y and InGaAlAs (In053Ga047As)1 (In0 52Al048As). The materials range from In0 53Ga047As to InP in the first case and from In0 53Ga0 47As to In0 52A10 48As in the latter case thus covering the bandgap (300 K) : 0. 75 to 1. 45 eV and 0. 75 to 1. 34 eV respectively. 34 / SPIE Vol. 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications 1(1990)

Paper Details

Date Published: 1 March 1991
PDF: 13 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24285
Show Author Affiliations
Maurice Quillec, Lab. de Bagneux/CNET (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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