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Proceedings Paper

Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs
Author(s): Maurice Quillec
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Paper Details

Date Published: 1 March 1991
PDF: 13 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24285
Show Author Affiliations
Maurice Quillec, Lab. de Bagneux/CNET (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

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