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Proceedings Paper

Growth dynamics of lattice-matched and strained layer III-V compounds in molecular beam epitaxy
Author(s): Bruce A. Joyce; J. Zhang; C. Thomas Foxon; D. D. Vvedensky; T. Shitara; A. K. Myers-Beaghton
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Paper Abstract

Recent experimental and theoretical results on cation incorporation dynamics in the MBE growth of 111-V materials will be presented. The measurement techniques were reflection high energy electron diffraction and modulated beam relaxation spectroscopy supported theoretically by Monte Carlo simulation. The concept of surface accumulation of cations (especially indium) during conventional MBE growth is introduced and adatom migration and attachment kinetics are considered in detail.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24284
Show Author Affiliations
Bruce A. Joyce, Imperial College (United Kingdom)
J. Zhang, Imperial College (United Kingdom)
C. Thomas Foxon, Philips Research Labs. (United Kingdom)
D. D. Vvedensky, Imperial College (United Kingdom)
T. Shitara, Imperial College (United Kingdom)
A. K. Myers-Beaghton, Imperial College (United Kingdom)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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