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Proceedings Paper

Mid-IR nonlinear spectroscopy of low-dimensional semiconductor structures using an OPG
Author(s): Konstantin L. Vodopyanov; Christopher C. Phillips
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Paper Abstract

A travelling wave optical parametric generator based on a ZnGeP2 crystal, pumped by an actively mode-locked Cr:Er:YSGG laser ((lambda) equals 2.8 micrometers ) has been used for the study of non-linear-optical phenomena in (InGa)As/(AlGa)As and GaAs/(AlGa)As Multi Quantum Wells (MQWs) which had intersubband absorption features in the range (lambda) approximately 4..10 micrometers . Using a two-color pump-probe scheme a dynamic spectral hole burning effect has been observed for the first time, confirming the inhomogeneous nature of MQW absorption line broadening in these samples.

Paper Details

Date Published: 10 June 1996
PDF: 8 pages
Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); doi: 10.1117/12.242127
Show Author Affiliations
Konstantin L. Vodopyanov, Imperial College (United Kingdom)
Christopher C. Phillips, Imperial College (United Kingdom)


Published in SPIE Proceedings Vol. 2801:
Nonlinear Optics of Low-Dimensional Structures and New Materials
Vladimir I. Emel'yanov; Vladislav Ya. Panchenko, Editor(s)

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