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Proceedings Paper

Quasi-zero-dimensional semiconductor structures: optical nonlinearities and hole-burning effects
Author(s): Sergey V. Gaponenko
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Paper Abstract

Population-induced optical nonlinearities and photo-induced spectral hole-burning phenomena in semiconductor nanocrystallites are described. Absorption saturation in small crystallites results in a genuine bleaching in the nanosecond time range with very small non-saturable contribution. In large crystallites exciton-exciton interactions lead to photo-induced blue shift of exciton resonance. Inhomogeneous broadening of absorption spectrum due to size distribution in a quantum dot ensemble results in several hole-burning effects. Along with the transient hole-burning due to absorption saturation the other processes are possible resulting in persistent or irreversible hole burning. The mechanism is proposed of persistent reversible hole-burning based on the local electric field effect due to photoionization or carrier surface localization in the resonantly excited crystallites. Permanent irreversible hole-burning is outlined for which the term `selective photochemistry' is relevant. All phenomena provide a scope of possible applications and at the same time may be used as an effective tool to evaluate intrinsic properties of quantum dots in the inhomogeneously broadened ensembles.

Paper Details

Date Published: 10 June 1996
PDF: 9 pages
Proc. SPIE 2801, Nonlinear Optics of Low-Dimensional Structures and New Materials, (10 June 1996); doi: 10.1117/12.242116
Show Author Affiliations
Sergey V. Gaponenko, Stepanov Institute of Physics (Belarus)


Published in SPIE Proceedings Vol. 2801:
Nonlinear Optics of Low-Dimensional Structures and New Materials
Vladimir I. Emel'yanov; Vladislav Ya. Panchenko, Editor(s)

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