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Proceedings Paper

Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-um design rules at gate level
Author(s): Sandrine Andre; Andre P. Weill
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Paper Abstract

The aim of this paper is to investigate experimentally the performances of three photolithographic processes, the monolayer, AQUATARR and BARLiR processes, for 0.35 micrometer patterning using the exposure-defocus (E-D) tree technique. Parameters of practical importance are considered such as exposure latitude and depth of focus for dense and isolated features, and their overlapping latitudes, i.e. the proximity effect. The influence of the resist thickness (minimum and maximum incoupling thicknesses) and the impact of a 50 nm sizing of the mask have also been evaluated. Using the BARLiR process, significant improvements have been demonstrated for proximity and CD swing effects. The results highlight the problems of pushing i-line lithography to the 0.35 micrometer regime and demonstrate that, to achieve acceptable CD control, a BAR process must be used.

Paper Details

Date Published: 14 June 1996
PDF: 10 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241868
Show Author Affiliations
Sandrine Andre, France Telecom/CNET (France)
Andre P. Weill, France Telecom/CNET (France)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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