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Proceedings Paper

Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist
Author(s): Yasunobu Onishi; Kazuo Sato; Kenzi Chiba; Masafumi Asano; Hirokazu Niki; Rumiko Horiguchi Hayase; Takao Hayashi
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Paper Abstract

The resist performance for quarter- and sub-quarter-micron domains using partially t- butoxycarbonylmethylated poly(4-vinylphenol) (BOCM-PVP) as a polymer dissolution inhibitor is reported. This resist contains some additives to improve resolution and process stability. This resist has high resolution, with linearity down to 0.225 micrometer L & S at 38 mJ/cm2 on a KrF excimer laser stepper (NA equals 0.5, sigma equals 0.5) with a COG mask. Using a halftone phase shifting mask, 0.175 micrometer L & S patterns are resolved with a 1 micrometer depth of focus (DOF) on a KrF excimer stepper (NA equals 0.5, sigma equals 0.7, 1/2 annular illumination). The line width change vs. PEB temperature ((Delta) CD/(Delta) T) is 1.3 nm/degree. The line width shift over time between exposure and PEB is within plus or minus 0.01 micrometer even after 1 hr delay in a basic- contamination-free environment (NH3 less than 1 ppb).

Paper Details

Date Published: 14 June 1996
PDF: 12 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241861
Show Author Affiliations
Yasunobu Onishi, Toshiba Corp. (Japan)
Kazuo Sato, Toshiba Corp. (Japan)
Kenzi Chiba, Toshiba Corp. (Japan)
Masafumi Asano, Toshiba Corp. (Japan)
Hirokazu Niki, Toshiba Corp. (Japan)
Rumiko Horiguchi Hayase, Toshiba Corp. (Japan)
Takao Hayashi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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