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Proceedings Paper

Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol
Author(s): Sonoko Migitaka; Shou-ichi Uchino; Takumi Ueno; Jiro Yamamoto; Kyoko Kojima; Michiaki Hashimoto; Hiroshi Shiraishi
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Paper Abstract

Acid-catalyzed intramolecular dehydration of phenylcarbinol is used to design highly sensitive negative resists for electron beam lithography. Of the phenylcarbinol resists evaluated in this study, the resist composed of 1,3-bis(alpha-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium triflate (DIT) shows the best lithographic performance in terms of sensitivity and resolution. Fine 0.25-micrometer line-and-space patterns were formed by using the resist containing Diol-1 with a dose of 3.6 (mu) C/cm2 in conjunction with a 50 kV electron beam exposure system.

Paper Details

Date Published: 14 June 1996
PDF: 7 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241859
Show Author Affiliations
Sonoko Migitaka, Hitachi, Ltd. (Japan)
Shou-ichi Uchino, Hitachi, Ltd. (Japan)
Takumi Ueno, Hitachi, Ltd. (Japan)
Jiro Yamamoto, Hitachi, Ltd. (Japan)
Kyoko Kojima, Hitachi, Ltd. (Japan)
Michiaki Hashimoto, Hitachi Chemical Co. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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