Share Email Print
cover

Proceedings Paper

Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography
Author(s): Hans W. P. Koops; Sergey V. Babin; Mark A. Weber; G. Dahm; A. Holopkin; M. N. Lyakhov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Structurization of three-dimensional surfaces has become more and more important for micro- mechanics, micro-electronics, and micro-optics. It is widely accepted that resist processes present fewer hazards to personnel and environment than conventional wet resist processes. Octavinylsilsesquioxan is investigated as a dry negative tone resist. It is employed to structure 250 micrometer deep steep surface steps, to modify fabricated three-dimensional structures with dot gratings for metrology applications, and to generate optical micro-lenses of 6 micrometer to 150 micrometer diameter on wafers and on the end of monomode fibers. The negative tone dry resist, also known as V-T8, enables coating of arbitrary substrates by evaporation in high vacuum. After exposure it is developed in high vacuum by a dry thermal treatment at 200 degrees Celsius. The resist is characterized using layers with a thickness in the range from 50 nm to 1 micrometer. Electrons with an energy ranging from 5 keV to 50 keV are used. The sensitivity of V-T8 films is 40 (mu) C/cm2 at 20 keV, which is orders of magnitude higher than that of other dry resist systems. The resist exhibits high dry etch resistivity. Its contrast is increased from 0.7 to 2.1 using plasma etching in CF4 as a post-development step.

Paper Details

Date Published: 14 June 1996
PDF: 10 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241856
Show Author Affiliations
Hans W. P. Koops, Deutsch Telekom AG (Germany)
Sergey V. Babin, Deutsch Telekom AG (Germany)
Mark A. Weber, Deutsch Telekom AG (Germany)
G. Dahm, Deutsch Telekom AG (Germany)
A. Holopkin, Technocenter AG (Russia)
M. N. Lyakhov, Technocenter AG (Russia)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

© SPIE. Terms of Use
Back to Top