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Proceedings Paper

High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents
Author(s): Mathias Irmscher; Bernd Hoefflinger; Reinhard Springer; Craig Stauffer; William Peterson
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Paper Abstract

The use of the SAHR (silylated acid hardened resist)-process for e-beam direct writing enables a high resolution in thick resists because the resolution-limiting effect of the forward scattering is eliminated. However, the volume expansion combined with the drop in glass transition temperature during silylation by monofunctional agents prevents, in spite of using the flow- effect reducing pre silylation development (PSD), the faithful preparation of irregular subquarter-micron patterns. In order to eliminate the flow problem and ensure high silicon contrast as well as low swelling of the silylated resist region, we evaluated mixtures of dimethylsilydiethylamine (DMSDEA) and bis(dimethylamino)methylsilane [B(DMA)MS] as silylating agents. A bifunctional agent share of 30% restrains the flow effect without decreasing the silicon concentration in contrast to the use of pure DMSDEA. A short, dilute alkaline development before silylation increases the dependence of silicon depth on exposure dose and reduces as a consequence the CD-deviations of irregular pattern elements due to the pattern-related backscattering. The realization of a 0.15 micrometer pattern in 0.7 micrometer thick resist has been demonstrated.

Paper Details

Date Published: 14 June 1996
PDF: 14 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241855
Show Author Affiliations
Mathias Irmscher, Institute for Microelectronics Stuttgart (Germany)
Bernd Hoefflinger, Institute for Microelectronics Stuttgart (Germany)
Reinhard Springer, Institute for Microelectronics Stuttgart (Germany)
Craig Stauffer, GENESIS (United States)
William Peterson, Silicon Resources, Inc. (United States)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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