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Proceedings Paper

Diffusion limitations in high-resolution lithography
Author(s): Lothar Bauch; Ulrich A. Jagdhold; Monika Boettcher; Georg G. Mehliss
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Paper Abstract

The reduction of the resist thickness, needed for high resolution lithography, increases thin film effects. The PRIME-process is used as an example of high resolution lithography (structure width less than 0.2 micrometer). In the paper the influence of the resist thickness and the DNQ-diffusion is studied by simulations and experiments. As a result it is to conclude, that the diffusion of DNQ has to be minimized to about 20 nm caused by the lateral dimension of the structures.

Paper Details

Date Published: 14 June 1996
PDF: 9 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241847
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Monika Boettcher, Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH (Germany)
Georg G. Mehliss, Allresist GmbH (Germany)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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