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Proceedings Paper

Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)
Author(s): Will Conley; Gregory Breyta; William R. Brunsvold; Richard A. Di Pietro; Donald C. Hofer; Steven J. Holmes; Hiroshi Ito; Ronald Nunes; Gabrielle Fichtl; Peter Hagerty; James W. Thackeray
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Paper Abstract

Improved stabilization of chemically amplified photoresist images can be achieved through reduction of free volume by film densification. When the host polymer has good thermal stability, the softbake temperature can be above or near the glass transition temperature (Tg) of the polymer. Annealing (film densification) can significantly improve the environmental stability of the photoresist system. Improvements in the photoacid generator, processing conditions, and overall formulation coupled with high NA (numerical aperture) exposure systems afford 200 nm linear resolution with excellent post-exposure delay stability. In this paper, lithographic data is shown for the improved ESCAP photoresist system (now called UVIIHS) currently under development for DRAM and logic device technology. We review the photoresist system, along with process- and formulation-related experiments on device levels and substrates demonstrating excellent 250 nm and sub-250 nm process windows.

Paper Details

Date Published: 14 June 1996
PDF: 27 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241840
Show Author Affiliations
Will Conley, IBM Microelectronics (United States)
Gregory Breyta, IBM Research Div. (United States)
William R. Brunsvold, IBM Microelectronics (United States)
Richard A. Di Pietro, IBM Research Div. (United States)
Donald C. Hofer, IBM Research Div. (United States)
Steven J. Holmes, IBM Microelectronics (United States)
Hiroshi Ito, IBM Research Div. (United States)
Ronald Nunes, Microelectronics (United States)
Gabrielle Fichtl, Siemens AG (Germany)
Peter Hagerty, Shipley Co. Inc. (United States)
James W. Thackeray, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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