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Proceedings Paper

Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography
Author(s): Thomas I. Wallow; Francis M. Houlihan; Omkaram Nalamasu; Edwin A. Chandross; Thomas X. Neenan; Elsa Reichmanis
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Paper Abstract

We have developed a fundamentally new class of photoresist matrix resins for use in 193 and 248 nm lithography based on cycloolefin-maleic anhydride alternating copolymers. When used in three-component formulations with cholate-based dissolution inhibitions (DIs) and conventional photoacid generators, these copolymers afford positive-tone resists with potential sub-0.25 micrometer image fidelity. The resists exhibit high contrast (3 - 5.5) and high sensitivity (3 - 5 mJ/cm2 at 248 nm, depending on exact formulation) with low loadings (ca. 1 wt%) of triphenylsulfonium salt photoacid generators. These formulations are sufficiently transparent to be used at 193 nm without further modification.

Paper Details

Date Published: 14 June 1996
PDF: 10 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241834
Show Author Affiliations
Thomas I. Wallow, AT&T Bell Labs. (United States)
Francis M. Houlihan, AT&T Bell Labs. (United States)
Omkaram Nalamasu, AT&T Bell Labs. (United States)
Edwin A. Chandross, AT&T Bell Labs. (United States)
Thomas X. Neenan, AT&T Bell Labs. (United States)
Elsa Reichmanis, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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