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Proceedings Paper

Design and properties of new deep-UV positive photoresist
Author(s): Sang-Jun Choi; Si-Young Jung; Chang-Hwan Kim; Choon-Geun Park; Woo-Sung Han; Young-Bum Koh; Moon-Yong Lee
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Paper Abstract

A new class of photodefinable polymer based on di-tert-butyl malonate protecting group was developed. A novel alkyl malonated copolymer was synthesized by copolymerization of di- tert-butyl malonylmethyl styrene (DBMST) with 4-acetoxystyrene (AST), and the subsequent deprotection of acetoxy group. Exposure of the material to deep-UV light followed by postbaking results in significant changes in solubility and polarity due to the formation of carboxylic functions which were produced on the polymer chain through the photogenerated acid catalyst (chemical amplification). This resist resolved 0.24 micrometer line-and-space patterns, formulated from di-tert-butyl malonate-protected polyhydroxystyrene (PHS) and triphenylsulfonium (TPS) triflate, with the aqueous base development using a KrF excimer laser stepper (NA 0.45) with a dose of 44 mJ/cm2.

Paper Details

Date Published: 14 June 1996
PDF: 9 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241831
Show Author Affiliations
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Si-Young Jung, Samsung Electronics Co., Ltd. (South Korea)
Chang-Hwan Kim, Samsung Electronics Co., Ltd. (South Korea)
Choon-Geun Park, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)
Moon-Yong Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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