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Proceedings Paper

Narrow polydispersity polymers for microlithography: synthesis and properties
Author(s): George G. Barclay; C. J. Hawker; Hiroshi Ito; Arturo J. Orellana; P. R.L. Malenfant; Roger F. Sinta
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Paper Abstract

The major component of a photoresist formulation is a matrix resin, which therefore has the greatest effect on resist performance. At deep-UV wavelengths the resins of choice are linear phenolic polymers, such as poly(4-hydroxystyrene) (PHOST), which have excellent absorption characteristics within the DUV region. This paper demonstrates the synthesis of a range of narrow polydispersity PHOST polymers (Mn equals 2,000 - 30,000; PD equals 1.1 - 1.4) via a 'living' radical polymerization technique. Further, the effects of polydispersity and molecular weight on the dissolution behavior and thermal properties of these polymers are reported.

Paper Details

Date Published: 14 June 1996
PDF: 12 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241823
Show Author Affiliations
George G. Barclay, Shipley Co. Inc. (United States)
C. J. Hawker, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Arturo J. Orellana, Shipley Co. Inc. (United States)
P. R.L. Malenfant, Shipley Co. Inc. (United States)
Roger F. Sinta, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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