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Proceedings Paper

Method of comparing chemical contrast with resist contrast
Author(s): Gregory M. Wallraff; Juliann Opitz; Gregory Breyta; Hiroshi Ito; Bruce M. Fuller
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Paper Abstract

This report describes a simple method for quantifying the extent of reaction occurring in positive tone chemically amplified photoresists. It involves comparing the amount of photoacid-induced deprotection (measured by FT-IR) to the resist thickness loss (e.g. the characteristic curve for resist contrast) measured as a function of incident dose. This method compares what we have termed the 'chemical contrast' to the resist contrast. It potentially provides a way to identify factors other than deprotection reactions (such as cross-linking, other chemical reactions or the dissolution inhibition/promotion for the PAG itself) which affect the dissolution properties of chemically amplified resists. This method can also be used to correlate lithographic performance with the actual chemistry occurring in the resist film. Results for a variety of different resist systems are described.

Paper Details

Date Published: 14 June 1996
PDF: 7 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241814
Show Author Affiliations
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Gregory Breyta, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Bruce M. Fuller, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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