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Proceedings Paper

Method of easily extracting resist development parameters for lithography simulation
Author(s): Kevin D. Lucas; Vladimir V. Ivin; Vladislav Kudrya; Dmitry Yu. Larin; Tariel M. Makhviladze; Marina G. Medvedeva; A. A. Rogor; Sergey V. Verzunov; D. C. Yang
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Paper Abstract

We present a description of a software tool and a methodology for easily creating photoresist development rate parameters in lithography simulation. The tool optimizes parameters using the Modified Simplex Method. The methodology uses the tool to provide insight into the effects of the development rate parameters and to find usable parameters quickly. The reasonings behind the methodology are discussed as well as advantages and disadvantages. Results from three different lithography simulators are shown to agree well with experimental cross-section SEM data.

Paper Details

Date Published: 7 June 1996
PDF: 12 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240987
Show Author Affiliations
Kevin D. Lucas, Motorola (United States)
Vladimir V. Ivin, Institute of Physics and Technology (Russia)
Vladislav Kudrya, Institute of Physics and Technology (Russia)
Dmitry Yu. Larin, Institute of Physics and Technology (Russia)
Tariel M. Makhviladze, Institute of Physics and Technology (Russia)
Marina G. Medvedeva, Institute of Physics and Technology (Russia)
A. A. Rogor, Institute of Physics and Technology (Russia)
Sergey V. Verzunov, Institute of Physics and Technology (Russia)
D. C. Yang, Motorola (United States)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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