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Proceedings Paper

Evaluation of OPC efficacy
Author(s): Franklin M. Schellenberg; Hua Zhang; Jim Morrow
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Paper Abstract

In this paper, we introduce standard metrics for the evaluation of three common problems in lithography: 1-D linewidth variation, line-end pullback, and 2-D corner rounding. Metrics that indicate both the magnitude of the problem and the quality of the formed features are presented. These can be used with digitized scanning electron microscope images of features formed from masks with and without overall process correction (OPC) to numerically determine the efficacy of the OPC techniques. All metrics tend to 0 in the case of perfect pattern fidelity.

Paper Details

Date Published: 7 June 1996
PDF: 9 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240986
Show Author Affiliations
Franklin M. Schellenberg, SEMATECH (United States)
Hua Zhang, SEMATECH (United States)
Jim Morrow, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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