Share Email Print
cover

Proceedings Paper

193-nm imaging using a small-field high-resolution imaging resist exposure tool
Author(s): Nadeem Hasan Rizvi; Malcolm C. Gower; Dominic Ashworth; Neil Sykes; Phil T. Rumsby; Bruce W. Smith; Francis N. Goodall; Ronald Albert Lawes
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A 193nm excimer laser microstepper has been developed for deep UV photolithography research at this wavelength. The system incorporates a x10, 0.5NA, 4mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate and polyvinylphenol photoresists. Well-resolved images of 0.2micrometers dense lines and spaces and 0.35micrometers diameter contact holes have been produced in PMMA and polyvinylphenol resists.

Paper Details

Date Published: 7 June 1996
PDF: 11 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240981
Show Author Affiliations
Nadeem Hasan Rizvi, Exitech Ltd. (United Kingdom)
Malcolm C. Gower, Exitech Ltd. (United Kingdom)
Dominic Ashworth, Exitech Ltd. (United Kingdom)
Neil Sykes, Exitech Ltd. (United Kingdom)
Phil T. Rumsby, Exitech Ltd. (United Kingdom)
Bruce W. Smith, Rochester Institute of Technology (United States)
Francis N. Goodall, Rutherford Appleton Lab. (United Kingdom)
Ronald Albert Lawes, Rutherford Appleton Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

© SPIE. Terms of Use
Back to Top