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Proceedings Paper

Wafer and chip deformation caused by pattern transfer
Author(s): Akira Imai; Norio Hasegawa; Shinji Okazaki; Kouichi Sakaguchi
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Paper Abstract

In this paper, we have investigated the deformation of wafers and chips caused by Si3N4 film deposition and pattern transfer on Si wafer substrates using experiments and finite element analysis simulations. From the experimental results, the wafer deformation is non- linearly dependent on transferred patterns, and the difference between the chip deformation of the x-axis component and that of the y-axis component when L/S patterns are transferred is as much as 10-nm under the experimental conditions. The simulated results also show that pattern displacement depends on the total film area ratio in a chip, the size of the transferred pattern area and its position. In order to suppress wafer deformation when using a 300-mm- (phi) wafer smaller than that of 200-mm-(phi) wafer, it was found that the wafer thickness should be 1.5 times thicker than 200-mm-(phi) wafer.

Paper Details

Date Published: 7 June 1996
PDF: 9 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240975
Show Author Affiliations
Akira Imai, Hitachi, Ltd. (Japan)
Norio Hasegawa, Hitachi, Ltd. (Japan)
Shinji Okazaki, Hitachi, Ltd. (Japan)
Kouichi Sakaguchi, Hitachi ULSI Engineering Corp. (Japan)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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