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This paper shows the suitability of i-line photolithography for production at 0.30 micrometers . The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum required depth of focus for a suitable 0.03 micrometers process is derived as 0.95 micrometers over at least a 10 percent process window. This will result in a 0.60 micrometers common corridor over a square 22 mm imaging field. In addition to the dense and isolated lines, a preliminary investigation of contact hole performance using chrome and phase shift masks was completed.