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Proceedings Paper

Image and resist profile by sublayer variation in deep-UV lithography
Author(s): Hye-Keun Oh; So-Yeon Baek; Seung-Wook Park; Kun-Sang Lee
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Paper Abstract

In order to make next generation ultra large scale integrated circuits, we have to form sub- quarter micron patterns. Among the several lithographic choices, the enhanced optical lithography techniques of using deep UV sources are strong candidates. The aerial image study shows the combination of annular illumination, binary intensity mask and pupil filter can be applied to all kinds of patterns. This optimum combination is applied to the resist profile study to find out the process latitude. We also investigated the process latitude variation by changing the sublayers such as anti-reflection coating, polysilicon, oxide and nitride.

Paper Details

Date Published: 7 June 1996
PDF: 10 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240960
Show Author Affiliations
Hye-Keun Oh, Hanyang Univ. (South Korea)
So-Yeon Baek, Hanyang Univ. (South Korea)
Seung-Wook Park, Hanyang Univ. (South Korea)
Kun-Sang Lee, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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