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Proceedings Paper

Photolithography using the AERIAL illuminator in a variable-NA wafer stepper
Author(s): Richard Rogoff; Guy Davies; Jan Mulkens; Jos de Klerk; Peter van Oorschot; Gabriele Kalmbach; Johannes Wangler; Wolfgang Rupp
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Paper Abstract

This paper shows the suitabilily of i-line photolithography for production at 0.30 tm. The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum required depth of focus for a suitable 0.30 tm process is derived as 0.95 tm over at least a 10% process window. This will result in a 0.60 m common corridor over a square 22 mm imaging feId. In addition to the dense and isolated lines, a preliminary investigation of contact hole performance using chrome and phase shift masks was completed.

Paper Details

Date Published: 7 June 1996
PDF: 17 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240954
Show Author Affiliations
Richard Rogoff, ASM Lithography (Netherlands)
Guy Davies, ASM Lithography (Netherlands)
Jan Mulkens, ASM Lithography (Netherlands)
Jos de Klerk, ASM Lithography (Netherlands)
Peter van Oorschot, ASM Lithography (Netherlands)
Gabriele Kalmbach, Carl Zeiss (Germany)
Johannes Wangler, Carl Zeiss (Germany)
Wolfgang Rupp, Carl Zeiss (Germany)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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