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Proceedings Paper

Sub-quarter-micrometer contact hole fabrication using annular illumination
Author(s): Miklos Erdelyi; Zsolt Bor; Gabor Szabo; Joseph R. Cavallaro; Michael C. Smayling; Frank K. Tittel; William L. Wilson
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Paper Abstract

Details of an experimental demonstration of a contact hole imaging system are reported in which the depth of focus is increased by a factor of about 3.5 using annular illumination. Due to spatial filtering and nonlinearity of the photoresist, the resolving power was enhanced by 52 percent and it was possible to pattern a 0.28 micrometers contact hole in photoresist deposited on a silica substrate. This technique is capable of fabrication sub-quarter micron holes using excimer laser radiation at 193 nm.

Paper Details

Date Published: 7 June 1996
PDF: 6 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240953
Show Author Affiliations
Miklos Erdelyi, Jozef Attila Univ. (Hungary)
Zsolt Bor, Jozef Attila Univ. (Hungary)
Gabor Szabo, Jozef Attila Univ. (Hungary)
Joseph R. Cavallaro, Rice Univ. (United States)
Michael C. Smayling, Rice Univ. (United States)
Frank K. Tittel, Rice Univ. (United States)
William L. Wilson, Rice Univ. (United States)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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