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Proceedings Paper

Application of alternating phase-shifting masks to sub-quarter-micrometer contact holes
Author(s): Sung-Chul Lim; Jongwook Kye; Sang-Gyun Woo; Sunggi Kim; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh
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Paper Abstract

The performance of alternating PSM and its modified type applicable to sub-quarter micron contact holes were studied via both simulations and experiments. We focused on the contact holes as follows: the pitch of one direction was fixed to 0.4micrometers (0.73(lambda) /NA) and the pitches of another direction were varied from 0.4micrometers to 1.6micrometers (2.9(lambda) /NA). Simulations and experiments were performed with a KrF excimer system (0.45 NA and 0.3 coherence factor). The alternating PSM provided benefits in printing highly packed contact holes, whereas the hybrid PSM having a mixed form of alternating PSM and outrigger PSM showed its effects for the contact holes packed only in one direction. It was found that the performance of PSM was strongly affected by duty ratios of the contact holes. In particular, the hybrid PSM improved both the roundness of contact holes and the depth-of- focus, enabling 0.45(lambda) /NA contact holes to be printed. Therefore, either the alternating or the hybrid PSM may extend the lifetime of the optical lithography.

Paper Details

Date Published: 7 June 1996
PDF: 8 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240950
Show Author Affiliations
Sung-Chul Lim, Samsung Electronics Co., Ltd. (South Korea)
Jongwook Kye, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Sunggi Kim, Samsung Electronics Co., Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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