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Proceedings Paper

Optical proximity correction of bit line pattern in DRAM devices
Author(s): Yongbeom Kim; Chang-Jin Sohn; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh
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Paper Abstract

In the bit line patterns of high density DRAM, there has not been enough to process latitude because of the optical proximity effect. To correct this problem, we suggest TCM (transmittance controlled mask) as a sort of optical proximity correction which has the same pattern of mask with the controlled transmittance. The parameters of established mask including transmittance and bulge size were decided by simulation. After evaluating the aerial image measurement system, wafer was evaluated to exposure tool with i-line exposure source. As a result, application of TCM can improve the overlay margin more than normal mask and DOF with 0.4micrometers as compared with normal mask.

Paper Details

Date Published: 7 June 1996
PDF: 10 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240949
Show Author Affiliations
Yongbeom Kim, Samsung Electronics Co. Ltd. (South Korea)
Chang-Jin Sohn, Samsung Electronics Co. Ltd. (South Korea)
Hoyoung Kang, Samsung Electronics Co. Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co. Ltd. (South Korea)
Young-Bum Koh, Samsung Electronics Co. Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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