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Proceedings Paper

Step-and-scan and step-and-repeat: a technology comparison
Author(s): Martin A. van den Brink; Hans Jasper; Steve D. Slonaker; Peter Wijnhoven; Frans Klaassen
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Paper Abstract

While the semiconductor manufacturing community is preparing for the transition from 0.35micrometers to 0.25micrometers technology, lithography equipment suppliers are preparing for the shift from step-and-repeat to step-and-scan systems. In addition, most wafer stepper users are planning to change from i-line to KrF laser wavelength technology. The question, however, is what are the advantages and disadvantages of scanners over steppers in a production environment. In this paper, we discuss the two different technologies using the following criteria: (1) throughput/cost of ownership, (2) CD control/depth of focus, (3) distortion and overlay. 248 nm lithography will be used for the 0.25micrometers process rule regime in combination with i-line systems being used for 50 to 70 percent of the lithography steps to reduce cost. Therefore, an ideal match is required between i-line systems and their DUV critical layer counterparts. For this reason, the economic equation of step-and-scan is determined by the total picture of matched DUV and i-line scanners. However, the comparisons between non-laser-based scanners and steppers and laser-based scanners and steppers are different. This paper discusses this subject using a combination of theoretical modeling and measured data. Imaging data from a new, DUV, double telecentric, 0.4 to 0.57 variable NA wafer stepper equipped with a variable coherence/annular illuminator is shown; thus proving that good imaging data at 0.25micrometers resolution at moderate cost is possible using wafer steppers.

Paper Details

Date Published: 7 June 1996
PDF: 20 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240936
Show Author Affiliations
Martin A. van den Brink, ASM Lithography (Netherlands)
Hans Jasper, ASM Lithography (Netherlands)
Steve D. Slonaker, ASM Lithography (Netherlands)
Peter Wijnhoven, ASM Lithography (Netherlands)
Frans Klaassen, ASM Lithography (Netherlands)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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