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Proceedings Paper

ArF MicroStep for 193-nm process development
Author(s): Christopher Sparkes; Larry F. Thompson; Richard J. Travers
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Paper Abstract

A cost effective wafer stepper system, the ArF MicroStep, has been developed for photoresist and process development at design rules of 0.18 micrometers to 0.13 micrometers using a 193 nm excimer laser illumination source. Development of the ArF MicroStep system was driven by customer requirements for a high numerical aperture exposure tool, with its configuration, specification and development mutually conducted between IC manufacturers, Integrated Solutions, Inc., and related equipment suppliers. The system was specifically designed for compatibility with imaging below 0.18 micrometers and is configured with a 10:1 catadioptic reduction objective, having variable numerical aperture from 0.4 to 0.6. During the manufacturing cycle, the ArF MicroStep and its reduction optics were characterized independently and verified to perform within the requirements of the overall system. Final system integration and test permitted verification of performance through exposures in photoresist. Exposures in a single level resist have demonstrated greater than 0.4 micrometers depth of focus for 0.16 micrometers features over the exposure field of the system, with dense structures down to 0.14 micrometers resolved by the ArF MicroStep. Using a top surface imaging process, 0.6 micrometers depth of focus has been demonstrated for 0.16 micrometers geometries, with dense structures down to 0.15 micrometers resolved.

Paper Details

Date Published: 7 June 1996
PDF: 8 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240933
Show Author Affiliations
Christopher Sparkes, Integrated Solutions, Inc. (United States)
Larry F. Thompson, Integrated Solutions, Inc. (United States)
Richard J. Travers, Integrated Solutions, Inc. (United States)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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