Share Email Print
cover

Proceedings Paper

Influence of process latitude on exposure characteristics
Author(s): Minoru Sugawara; Hiroichi Kawahira; Satoru Nozawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Influence of process latitude on exposure characteristics is systematically investigates by using exposure-defocus and mask fabrication latitude methodology. It will be shown how wafer line width tolerance contributes to influence of exposure and mask line width latitudes on depth of focus (DOF) for several elemental patterns. For three test patterns, DOF process latitude functions which describe pattern fidelity are used to evaluate influence of the process latitudes. It will be concluded that larger wafer line width tolerance significantly decreases influence of the exposure and mask line width latitudes on DOFs.

Paper Details

Date Published: 7 June 1996
PDF: 15 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240932
Show Author Affiliations
Minoru Sugawara, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)
Satoru Nozawa, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

© SPIE. Terms of Use
Back to Top