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Proceedings Paper

0.2-um lithography using i-line and alternating phase-shift mask
Author(s): Patrick Schiavone; Frederic P. Lalanne
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Paper Abstract

Alternating phase shift mask in association with the I-line resist process is applied to the gate level of 0.25micrometers and below design rules. An exposure latitude of 30 percent on 0.25micrometers isolated lines is deduced from electrical and atomic force microscope measurements of test wafers. Results on batch wafers confirm the ability of this standard process to print 0.25micrometers design rule circuits. It is possible, with minor process modifications, to print 0.18micrometers transistors with good dimension control for architecture studies.

Paper Details

Date Published: 7 June 1996
PDF: 8 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240917
Show Author Affiliations
Patrick Schiavone, France Telecom-CNET (France)
Frederic P. Lalanne, France Telecom-CNET (France)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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