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Proceedings Paper

Practical implementation of alternating PSM to memory device of sub-0.25-um technology
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Paper Abstract

An alternating phase shift mask is very effective to memory devices which have highly repeated patterns. In order to apply the alternating phase shift mask to real device, we have investigated the design problems such as proximity effect, phase contradiction, phase transition, and linewidth variation. We also design various hard defects in order to check defect printability on wafer. Using i-line lithography with an alternating phase shift mask, we obtain useful focus latitude of 1.2micrometers for bit line of 256M DRAM. Deep UV alternating phase shift mask is used for isolation patterns with design rule of 0.16micrometers . The experimental and simulation results for phase-induced problems and defect printability on wafer are described in detail.

Paper Details

Date Published: 7 June 1996
PDF: 9 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240916
Show Author Affiliations
Chang-Nam Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hung-Eil Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Bom Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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