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Proceedings Paper

Migrating deep-UV lithography to the 0.25-um regime: issues and outlook
Author(s): Kevin J. Orvek; Sasha K. Dass; Len Gruber; Scott A. Dumford; MaryAnn Piasecki; Gregory W. Pollard; Ian D. Fink
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Paper Abstract

Experimental data from the current 0.35micrometers deep-UV process was used in conjunction with simulations of future 0.25micrometers lithography to provide a means of evaluating the possibility of meeting the National Lithography Roadmap goals for CD and overlay. This study found that the CD control issue has too many components to be captured by the single number listed in the Roadmap. The current magnitude of many of these components looks too large to justify their shrinking down to values consistent with the general 30 percent shrinks characteristic of our industry. For overlay, the Roadmap value is clearly attainable for matched steppers in controlled tests, however unlikely for daily product results on random- matched steppers in a production environment. This study also examined the impact of pushing deep-UV technology to the 0.25micrometers regime on the process latitudes of dense/isolated lines and upon the poly endcap.

Paper Details

Date Published: 7 June 1996
PDF: 12 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240914
Show Author Affiliations
Kevin J. Orvek, Digital Equipment Corp. (United States)
Sasha K. Dass, Digital Equipment Corp. (United States)
Len Gruber, Digital Equipment Corp. (United States)
Scott A. Dumford, Digital Equipment Corp. (United States)
MaryAnn Piasecki, Digital Equipment Corp. (United States)
Gregory W. Pollard, Digital Equipment Corp. (United States)
Ian D. Fink, Digital Equipment Corp. (United States)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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