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Proceedings Paper

Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm
Author(s): Anne-Marie Goethals; J. Vertommen; Frieda Van Roey; Anthony Yen; Alexander V. Tritchkov; Kurt G. Ronse; Rik M. Jonckheere; Luc Van den Hove
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Paper Abstract

We present a description of a software tool and a methodology for easily creating photoresist development rate parameters in lithography simulation. The tool optimizes parameters using the modified simplex method. The methodology uses the tool to provide insight into the effects of the development rate parameters and to find usable parameters quickly. The reasoning behind the methodology are discussed as well as advantages and disadvantages. Results from three different lithography simulators are shown to agree well with experimental cross-section SEM data.

Paper Details

Date Published: 7 June 1996
PDF: 13 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240910
Show Author Affiliations
Anne-Marie Goethals, IMEC (Belgium)
J. Vertommen, LAM Research Corp. (Belgium)
Frieda Van Roey, IMEC (Belgium)
Anthony Yen, IMEC and Texas Instruments Inc. (United States)
Alexander V. Tritchkov, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)
Rik M. Jonckheere, IMEC (Belgium)
Luc Van den Hove, IMEC (Belgium)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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